THIN FILM COLD CATHODE

Title:

THIN FILM COLD CATHODE

Document Type and Number:

Japanese Patent JP2001202869

Kind Code:

A

Abstract:

To provide a thin film cold cathode using a stable nitride semiconductor thin film in the atmosphere.

This thin film cold cathode emits electrons from a nitride semiconductor thin film formed on the substrate into a vacuum. After forming of the nitride semiconductor thin film, it is processed in hydrogen fluoride acid solution.

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Inventors:

IKEDA JUNJI

Application Number:

JP2000009618A

Publication Date:

July 27, 2001

Filing Date:

January 19, 2000

Export Citation:

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Assignee:

NIKON CORP

International Classes:

H01J9/02; H01J1/30; H01J1/304; H01L21/027; (IPC1-7): H01J1/304; H01J1/30; H01J9/02; H01L21/027

Attorney, Agent or Firm:

Toshiaki Hosoe

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