Title:
THIN FILM CONTAINING POTASSIUM AND ITS PRODUCTION
Document Type and Number:
Japanese Patent JP3967455
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To stably obtain a potassium-containing thin film scarcely having the concentration gradient of the potassium content by using a potassium β- diketone complex preliminarily melted at a melting point or higher and subsequently cooled and solidified as a potassium source for vaporization.
SOLUTION: A raw material container 2 for an organic potassium complex is set into a raw material oven 7, and a raw material container 9 for a niobium compound is also set into the other raw material oven 8. The raw material ovens 7, 8 are heated to vaporize the raw materials, and subsequently introduced together with Ar gas into a reactor 10. Oxygen is also introduced from an oxygen source 11 into the reactor 10. A susceptor 13 heated with high frequency is set into the reactor 10. A substrate 14 is placed on the susceptor 13. An organic potassium complex vapor, pentethoxyniobium vapor and oxygen gas are introduced into the reactor 10 and subsequently reacted with each other on the surface of the substrate 14, such as silicon single crystal, maintained at a prescribed temperature to deposit a KNbO3 film. The reactor 10 is connected to an exhausted gas 15, and an exhausted gas is forcibly exhausted to maintain the reactor 10 in vacuo.
Inventors:
田▲崎▼ 雄三
Mamoru Sato
Atsushi Onoe
Ayako Yoshida
Kiyofumi Takema
Mamoru Sato
Atsushi Onoe
Ayako Yoshida
Kiyofumi Takema
Application Number:
JP10207798A
Publication Date:
August 29, 2007
Filing Date:
March 30, 1998
Export Citation:
Assignee:
DOWA Holdings Co., Ltd.
Pioneer Corporation
Pioneer Corporation
International Classes:
C30B29/30; C23C16/40; C23C16/448; C30B25/02; (IPC1-7): C30B29/30
Domestic Patent References:
| JP10025576A | ||||
| JP5255855A |
Attorney, Agent or Firm:
Kenji Wada
Koji Hagiwara
Koji Hagiwara