Title:
THIN FILM DEPOSITION METHOD AND SYSTEM THEREFOR
Document Type and Number:
Japanese Patent JP2005350706
Kind Code:
A
Abstract:
To provide a thin film deposition method and a system therefor capable of depositing a thin film of LiNbO3 or LiTaO3 with a constant ratio composition on the surface of a substrate.
In the thin film deposition method where an LiNbO3 thin film is deposited on the surface of a substrate by sputtering, ECR (Electron Cyclotron Resonance) sputtering using LiNbO3 as a main target and sputtering using Li2O as an auxiliary target are simultaneously performed to deposit a film on the surface of a substrate, and also, the sputtering rate in the latter is independently controlled to the sputtering rate in the former.
Inventors:
AKAZAWA MASAYOSHI
SHIMADA MASARU
SHIMADA MASARU
Application Number:
JP2004170665A
Publication Date:
December 22, 2005
Filing Date:
June 09, 2004
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
C23C14/08; C23C14/34; (IPC1-7): C23C14/08; C23C14/34
Attorney, Agent or Firm:
Tsuneaki Nagao
Previous Patent: SURFACE TREATMENT COMPOSITION FOR METAL
Next Patent: CERMET, COATED CERMET AND METHOD FOR MANUFACTURING THEM
Next Patent: CERMET, COATED CERMET AND METHOD FOR MANUFACTURING THEM