Title:
THIN FILM DIELECTRIC ELEMENT
Document Type and Number:
Japanese Patent JPH0730071
Kind Code:
A
Abstract:
PURPOSE: To provide the title compact thin film dielectric element having large accumulated charge and high junction strength with a substrate.
CONSTITUTION: A metallic thin film 3 comprising a transition metal such as Ti is formed on a substrate 2 comprising silicon wafer with one oxide film formed thereon and then a Pt film 4 is formed on the metallic thin film 3 to manufacture a lower electrode 5. Furthermore, a dielectric film 6 comprising rhombic zirconium oxide is formed on the lower electrode 5 by CVD process etc., and then an Au electrode is evaporated on the dielectric film 6 to form an upper electrode 7 for manufacturing the title thin film dielectric element.
Inventors:
ANDO AKIRA
NAKAMURA TAKANORI
TAKESHIMA YUTAKA
KIKKO TOSHIHIKO
TOMONO KUNISABURO
NAKAMURA TAKANORI
TAKESHIMA YUTAKA
KIKKO TOSHIHIKO
TOMONO KUNISABURO
Application Number:
JP19909593A
Publication Date:
January 31, 1995
Filing Date:
July 15, 1993
Export Citation:
Assignee:
MURATA MANUFACTURING CO
International Classes:
H01L27/04; H01L21/822; H01L21/8242; H01L21/8246; H01L27/10; H01L27/105; H01L27/108; (IPC1-7): H01L27/04; H01L21/822; H01L21/8242; H01L27/108
Attorney, Agent or Firm:
Nakano Masafusa
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