PURPOSE: To miniaturize the shape of an element while reducing the element capacitance of a diode by constituting the diode by a first electrode layer formed on a substrate to a pattern shape, a semiconductor layer formed on the electrode layer to a pattern shape and a second electrode layer, which has insulating films formed on both side surfaces of the first electrode layer and the semiconductor layer in a self-alignment manner and is formed on the semiconductor layer into pattern shape.
CONSTITUTION: A diode is formed only at the intersecting point of a first electrode layer 6 and a second electrode layer. The second electrode layer 9 fills the role of a contact with the upper surface of a semiconductor layer 7 and inter-element mutual wirings. The first electrode layer 6 and the semiconductor layer 7 are formed on a substrate 5 in the order, and patterned according to a first pattern. An insulating film 8 is formed, and the insulating film 8 is etched by using a RIE31. SiO28 is formed on the side surfaces of the first electrode layer 6 and the semiconductor layer 7 in a self-alignment manner, and the second electrode layer 9 is shaped, and patterned according to a second pattern. The semiconductor layer 7 and the insulating film 8 are patterned while using the electrode layer 9 as a mask. The thin-film diode is formed only to the superposed sections of the first electrode layer 6 and the second electrode layer 7.
TANABE HIROSHI
AOTA KATSUMI
SEKIGUCHI KANETAKA
TOGASHI SEIGO
YAMAMOTO ETSUO
| JPS499195A | 1974-01-26 | |||
| JPS57106084A | 1982-07-01 |