PURPOSE: To brighten EL elements to a very high degree by adding specific compounds as dopants.

CONSTITUTION: A compound with a melting point of 800°C or less is added to a luminescent layer 4 as an dopant and, after making film, given a heat treatment at a temperature of 650°C or more in a sulfide gas stmosphere, which grows the crystal particles of the layer 4 large. Other dopants to be added to the layer 4 laying stress on points other than luminescence are preferably agents which can be carrier supply sources in addition to a melting point of 800°C or less, and proper compounds meeting those properties are fluoride, chloride, bromide and iodide including Ag, Cu, In, Al, Pb and K.