PURPOSE: To obtain a high luminance thin film EL element which is chemically stable, without giving bad effect to an emission layer mother material by forming the emission layer out of sulfide of group IIIA elements.
CONSTITUTION: An emission layer is formed out of sulfide of group IIIA element, while a rare earth element is added thereto as the center of emission. Namely, by using plurality of deposition sources arranged in a vacuum container, a group IIIA element and sulfur are controlled and evaporated respectively, and are chemically bonded together, so as to form a film. By using sulfide of group IIIA element for an emission layer material, and by adding a rare earth element thereto for the center of emission, the combination of similar ion radius is achieved, while little defection is generated, and concentration extinction is hard to produce. Since the good quality thin film can be obtained with a stoichimetry maintained, a high luminance EL device can be obtained, and the thin film EL device in such a structure is chemically stable.
MATSUNO AKIRA
NIRE TAKASHI
| JPS61271779A | 1986-12-02 | |||
| JPS6388787A | 1988-04-19 | |||
| JPH01115091A | 1989-05-08 |
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