Title:
THIN FILM OF ELECTRON DONOR ACCEPTOR COMPLEX AND FIELD EFFECT TRANSISTOR
Document Type and Number:
Japanese Patent JP2005123354
Kind Code:
A
Abstract:
To provide a field effect transistor having a high operational performance.
The field effect transistor is equipped with (A) a source/drain electrode 14, (B) a channel forming region layer 16 formed between the source electrode 14 and the drain electrode 14, and (C) a gate electrode 12 provided so as to be opposed to the channel forming region layer 16 through the gate insulating film 13. The channel forming region layer 16 is constituted of a separated lamination type electron donor acceptor complex thin film 15 consisting of an electron-donative donor molecular layer and an electron receptive acceptor molecular layer, laminated sequentially in the direction of thickness of the layer 16.
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Inventors:
UGAWA AKIHITO
Application Number:
JP2003355819A
Publication Date:
May 12, 2005
Filing Date:
October 16, 2003
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L51/05; H01L21/336; H01L29/786; H01L51/00; H01L51/30; H01L51/40; (IPC1-7): H01L51/00; H01L21/336; H01L29/786
Domestic Patent References:
| JPH03173832A | 1991-07-29 | |||
| JPH0695185A | 1994-04-08 | |||
| JPH0279401A | 1990-03-20 | |||
| JPH01166528A | 1989-06-30 |
Attorney, Agent or Firm:
Takahisa Yamamoto