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Title:
THIN FILM ELECTROSTATIC CHUCK
Document Type and Number:
Japanese Patent JP2000306985
Kind Code:
A
Abstract:

To obtain an electrostatic chuck which displays a large attraction force over a wide temperature range, by a method wherein an aluminum nitride film which is formed by a vapor-phase synthetic method is formed as an attraction layer on the surface of an electrode layer or on the surface of a dielectric on which an electrode layer is formed.

In this thin film electrostatic chuck 1, an aluminum nitride film 2 is formed as an attraction layer on the surface of an electrode layer 3 which is formed of a metal, a conductive ceramic or the like by using a laser MOCVD method as one kind of a vapor-phase synthetic method. Alternatively, a dielectric 4 is formed on an electrode layer 3, an aluminum nitride layer 2 is formed as an attraction layer on the surface of their two-layer structure, and a three-layer structure is formed. As a result, it is possible to form the electrostatic chuck whose attractive force is not interior to that of a ceramic-based electrostatic chuck, whose resistivity is not lowered even at a high temperature and which displays a large attractive force over a wide temperature range.


Inventors:
KANEKO KAZUO
KANEKO KAYU
MORIKAWA SHIGERU
FUJII TAKAMITSU
KAJIMURA ATSUKO
Application Number:
JP11029399A
Publication Date:
November 02, 2000
Filing Date:
April 19, 1999
Export Citation:
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Assignee:
NIPPON ENG KK
KANSAI RES INST
International Classes:
H01L21/683; H01L21/205; H01L21/68; H02N13/00; (IPC1-7): H01L21/68; H01L21/205; H02N13/00
Attorney, Agent or Firm:
Shuichiro Kitamura



 
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