To provide a thin-film-forming apparatus which forms a film while bringing a certain ratio of ions existing in plasma into contact with the thin film.
Thin film-forming-apparatus 1 comprises: a plasma-generating means 80 for generating plasma in a vacuum chamber 11, which is installed at a position corresponding to the opening 11a of the vacuum chamber 11; a substrate-holding means 13 for holding a substrate in the vacuum chamber 11; and an ion-annihilating means 90 installed between the plasma-generating means 80 and the substrate-holding means 13. An area of the ion-annihilating means 90 which shields the substrate-holding means 13 with respect to the plasma-generating means 80 when viewed from the plasma-generating means 80 towards the substrate holder 13 is composed to be smaller than the rest area when viewed from the plasma-generating means 80 towards the substrate holder 13.
ARAI TETSUHARU
CHIBA KOKI
SAKURAI TAKESHI
KYO YUSHO
Yuriko Shirota