Title:
THIN FILM FORMING APPARATUS
Document Type and Number:
Japanese Patent JP3925566
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a thin film forming apparatus which eliminates the occurrence of a circulating flow and stagnating of reactive gases within the dead space of the circumference of a reactive gas introducing section.
SOLUTION: This thin film forming device has a reaction vessel 1 having the reactive gas introducing section 13 and a substrate holder 12. The reactive gases are introduced from the reactive gas introducing section 13 to the substrate 23 on the substrate holder and high-frequency electric power is supplied to the reactive gas introducing section 13 to form plasma and to excite the reactive gases. Thin films are deposited on the substrate by the chemical reaction. In such a case, the dead space at the circumference of the reactive gas introducing section 13 is provided with gas introducing sections 27, 29, 30, 32 for creating the flow of gases, such as purging gases. The reactive gases, etc., which are liable to stagnate in the dead space are pushed and run together by the flow of these gases, by which the occurrence of the circulating flow and stagnating of the reactive gases is prevented.
Inventors:
Shigeru Mizuno
Application Number:
JP32114496A
Publication Date:
June 06, 2007
Filing Date:
November 15, 1996
Export Citation:
Assignee:
Canon ANELVA Corporation
International Classes:
C23C16/44; C23C16/50; C23C16/02; C23C16/455; H01L21/205; H01L21/285; (IPC1-7): C23C16/50; C23C16/44; H01L21/205; H01L21/285
Domestic Patent References:
| JP7078774A | ||||
| JP8139034A | ||||
| JP6097080A | ||||
| JP5166734A |
Attorney, Agent or Firm:
Tamiya Hiroshi