THIN FILM FORMING APPARATUS

Japanese Patent JPS6336519

A

PURPOSE: To obtain high-quality epitaxial thin films having a uniform thickness and a uniform resistance value, by arranging a pair of supports for carrying objects to be treated within a reaction furnace such that they are opposed to each other and they are rotatable in opposite directions.

CONSTITUTION: Susceptors 25 and 26 are arranged approximately vertically within a reaction chamber 20 such that they are opposed to each other and they are rotatable in opposite directions. When epitaxial reaction proceeds within the reaction chamber 20, the susceptors 25 and 26 function as radiation heat sources. Further, as the susceptors 25 and 26 rotate in the opposite directions to each other, wafers 6 carried thereon are also rotated. Accordingly, more uniform temperature distribution is realized over the susceptors 25 and 26 and epitaxial layers having a uniform thickness and a uniform resistance value can be obtained.

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OMURA MASAKI
SAKAMA HIROSHI
ARAKI KENJI

JP17914686A

February 17, 1988

July 30, 1986

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NIPPON KOKAN KK

H01L21/205; (IPC1-7): H01L21/205

Takehiko Suzue

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