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Title:
薄膜形成装置
Document Type and Number:
Japanese Patent JP3839038
Kind Code:
B2
Abstract:
A thin film deposition apparatus comprising gas introduction means for introducing a reactive gas into the vacuum container (11), and plasma generating means(61) for generating a plasma of the reactive gas within the vacuum container(11). The plasma generating means(61) comprises a dielectric wall(63) and the antennas having a spiral shape(65a,65b). The antennas (65a, 65b) are connected in parallel in relation to the RF power supply(69), and provided adjacently in a direction perpendicular to a normal to a surface on which the antennas(65a,65b) are spiraled.

Inventors:
Song Song
Takeshi Sakurai
Murata Takanori
Application Number:
JP2005500523A
Publication Date:
November 01, 2006
Filing Date:
June 02, 2003
Export Citation:
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Assignee:
Syncron Co., Ltd.
International Classes:
C23C14/40; C23C14/00; C23C14/08; C23C14/10; C23C14/34; C23C14/35; C23C14/56; C23C14/58; C23C16/44; G02B1/10; H01J37/32; H01L21/3065; H01L21/31; H01L21/318; H05H1/46; G02B5/28
Domestic Patent References:
JP2001234338A
JP11026191A
JP2001353440A
JP2002316293A
Attorney, Agent or Firm:
Atsushi Akiyama
Yuriko Shirota