Title:
薄膜形成方法
Document Type and Number:
Japanese Patent JP3744554
Kind Code:
B2
Abstract:
A W film having good surface morphology and high reflectance is formed while avoiding any degradation of the characteristics such as specific resistivity. The method for forming a thin film is carried out by depositing a W film on a heated substrate using CVD. The raw material gas is WF6, and the reducing gases are SiH4 and H2. In the first stage of the film formation, the reaction between WF6 and SiH4 forms nuclei on the surface of the substrate. In the second stage, following the first stage, the reaction between WF6 and H2 forms the W film. The second stage is controlled to form crystal grains of a predetermined size. The first stage and the second stage are alternately repeated as many times as necessary.
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Inventors:
Shigeru Mizuno
Akihiko Takara
Akihiko Takara
Application Number:
JP24220194A
Publication Date:
February 15, 2006
Filing Date:
September 09, 1994
Export Citation:
Assignee:
Canon ANELVA Corporation
International Classes:
H01L21/285; C23C16/02; C23C16/14
Domestic Patent References:
| JP6275624A | ||||
| JP629236A | ||||
| JP5152292A |
Other References:
伊藤由規、他、Multi-Step法により形成したCVD-W膜の特性、第40回応用物理学関連連合講演会講演予稿集、1993年、第2分冊、782ページ
Attorney, Agent or Firm:
Tamiya Hiroshi