PURPOSE: To employ a quantum well structure containing positive carrier conductive impurities as a quantum well structure intermediate layer.

CONSTITUTION: A thin film light emitting diode is composed of positive and negative electrodes and a positive carrier implanted layer or a negative carrier implanted layer provided between the electrodes. An intermediate layer thin film which contains positive carrier conductive impurities and which is made of hydrosiliconcarbide is inserted between the positive carrier implanted layer and an intrinsic semiconductor layer. Thus, a quantum well layer which has the relatively small content of C or H and has a narrow forbidden band is held between two barrier layers which have relatively large contents of C and H and have wide forbidden band. With this constitution, a positive carrier implantation efficiency can be improved and a light emission efficiency can be improved.