THIN FILM MAGNETIC RELUCTANCE ELEMENT - MATSUSHITA ELECTRIC WORKS LTD

Title:

THIN FILM MAGNETIC RELUCTANCE ELEMENT

Document Type and Number:

Japanese Patent JPS5326589

Kind Code:

A

Abstract:

PURPOSE:After a mass of In educed in the surface of a InSb thin film is eliminated by polidhing, InSb is evaporated again to make a thin film reluctance element of a double-layer structure, so that sensitivity can be improved.

More Like This:

JP2021527964	Magnetic sensor with mixed oxide passivation layer
JP2005116701	MAGNETIC DETECTING ELEMENT
JP6038451	The method and system for providing the magnetic layer which has an insertion layer for spin transfer torque memories

Inventors:

IITAKA YUKIO
YAMADA SHIYUUJI

Application Number:

JP10122276A

Publication Date:

March 11, 1978

Filing Date:

August 24, 1976

Export Citation:

Click for automatic bibliography generation Help

Assignee:

MATSUSHITA ELECTRIC WORKS LTD

International Classes:

H01L43/10; H01L43/08; (IPC1-7): H01L43/08

Previous Patent: JPS5326588

Next Patent: DEVICE AND METHOD FOR PACKAGING SEMICONDUCTOR ELEMENT