Title:
薄膜製造方法
Document Type and Number:
Japanese Patent JP5709730
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve photoelectric conversion efficiency of a photoelectric conversion device which uses a compound semiconductor containing chalcogen element.SOLUTION: At least one substrate is prepared in which a first coat containing a metal element other than chalcogen element that is contained in a compound semiconductor is arranged (Sp4). At least one substrate is heated in an atmosphere containing water content and/or oxygen, to cause oxidation at a part of the metal element, so that a second coat containing a metal element a part of which is oxidized on at least one substrate is formed (Sp5). At least one substrate where the second coat is arranged on one main surface is disposed in one heating furnace (Sp7). At least one of supplying of the gas containing chalcogen element into one heating furnace and exhausting from one heating furnace is adjusted, and in each spatial region of a predetermined size that contacts to each second coat, the gas containing chalcogen element is made to flow for heating such that the supply amount of chalcogen element per unit time varies according to distribution of oxygen content relating to each second coat, thereby forming a thin film of compound semiconductor on at least one substrate (Sp8).
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Inventors:
Yusuke Miyamichi
Tomoji Asano
Tatsuya Domoto
Ryo Matsuoka
Tomoji Asano
Tatsuya Domoto
Ryo Matsuoka
Application Number:
JP2011249650A
Publication Date:
April 30, 2015
Filing Date:
November 15, 2011
Export Citation:
Assignee:
Kyocera Corporation
International Classes:
H01L31/18; H01L21/205; H01L31/0749
Domestic Patent References:
| JP114009A | ||||
| JP637342A | ||||
| JP2000174306A |
Foreign References:
| WO2009033674A2 | ||||
| US20090260670 |
Attorney, Agent or Firm:
Yoshitake Hidetoshi
Takahiro Arita
Takahiro Arita