Title:
THIN FILM MATERIAL
Document Type and Number:
Japanese Patent JPS627171
Kind Code:
A
Abstract:
PURPOSE:To obtain a long material of free stroke of both carriers with less recombination of light emission by alternately forming electron and hole passages in size smaller than the free stroke intrinsic for the material used in the constitution. CONSTITUTION:P-type and N-type hydrogenated amorphous silicon films 12, 13 are accumulated on a glass substrate 11 by a monosilane high frequency glow discharge decomposing method. Thus, since electrons and holes generated, for example, by a photovoltaic method are gathered separately at the films 12, 13, both carriers are separated in a real space to prevent them from recombining, and when an electric field is applied elevationally or perpendicularly to the sheet surface, the free stroke of the carrier is substantially increased to raise the photoconductivity and to increase the easiness.
Inventors:
SHIMADA JUICHI
ITO HARUO
MATSUBARA SUNAO
MURAMATSU SHINICHI
NAKAMURA NOBUO
KOKUUCHI SHIGERU
ITO HARUO
MATSUBARA SUNAO
MURAMATSU SHINICHI
NAKAMURA NOBUO
KOKUUCHI SHIGERU
Application Number:
JP14473985A
Publication Date:
January 14, 1987
Filing Date:
July 03, 1985
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L31/0248; H01L31/08; (IPC1-7): H01L31/08
Attorney, Agent or Firm:
Katsuo Ogawa