Title:
薄膜金属酸化物構造体およびその製造方法
Document Type and Number:
Japanese Patent JP2004505444
Kind Code:
A
Abstract:
High quality epitaxial layers of metallic oxide materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.
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Inventors:
Eisen visor, cart
Finder, Jeffrey M.
Lambdani, Jamal
Drupad, Ravindranas
Wooms, William Jay
Finder, Jeffrey M.
Lambdani, Jamal
Drupad, Ravindranas
Wooms, William Jay
Application Number:
JP2002514770A
Publication Date:
February 19, 2004
Filing Date:
July 19, 2001
Export Citation:
Assignee:
MOTOROLA INCORPORATRED
International Classes:
H01L21/20; C30B23/02; C30B25/02; H01L21/316; H01L39/24; H01L41/22; H01L41/316; H01L21/02; (IPC1-7): H01L21/316; H01L21/20
Attorney, Agent or Firm:
Mamoru Kuwagaki