PURPOSE: To fuse a thin-film resistor layer by means of a small current by a method wherein a group of minute insulating-material lumps are arranged on the rear surface side of the thin-film resistor layer so as to encroach.

CONSTITUTION: A silicon oxide film 12 is formed on the surface of a silicon substrate 11, and a thin-film resistor layer 14 which is composed of a main body 14a and of end parts 14b, 14c is formed on it. The main body 14a is formed so as to cover a group of minute silicon lumps 13b on the silicon oxide film 12. An aluminum interconnection layer 15a is vapor-deposited and formed so as to cover the end part 14b. On the other hand, an aluminum interconnection layer 15b is vapor-deposited and formed so as to cover the end part 14c. As a result, minute and uniform uneven parts can be formed simply on the rear surface 14e of the thin-film resistor layer 14 by means of the group of minute silicon lumps 13b. Consequently, the thin-film resistor layer can be fused by means of a small current, and the power consumption of a semiconductor device in which the thin-film resistor layer has been incorporated can be reduced.