THIN FILM SEMICONDUCTOR DEVICE - MATSUSHITA ELECTRIC WORKS LTD

Title:

THIN FILM SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH04239780

Kind Code:

A

Abstract:

PURPOSE:To provide thin film semiconductor devices with MOS transistor- driving resistors whose outputs do not lower even if monocrystal Si photovoltaic elements are replaced with amorphous Si photovoltaic elements. CONSTITUTION:A plurality of thin film photovoltaic elements composed of lower metal electrodes 2, pintype amorphous Si layers 3, and upper transparent electrodes 4 are formed in series on an insulating substrate 1, and transparent insulating protective films 5 are formed on them. Then light-transmittable resistors 7 are formed on the protective films 5 and the resistors 7 are connected with the above mentioned photovoltaic elements in parallel with Al wirings 6.

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Inventors:

SAKAI ATSUSHI
TOMONARI SHIGEAKI
NAKAMURA TAKURO

Application Number:

JP603491A

Publication Date:

August 27, 1992

Filing Date:

January 23, 1991

Export Citation:

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Assignee:

MATSUSHITA ELECTRIC WORKS LTD

International Classes:

H01L27/12; H01L31/12; H03K17/78; (IPC1-7): H01L27/12; H01L31/12; H03K17/78

Attorney, Agent or Firm:

Mikio Kawase (1 person outside)

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