Title:
THIN FILM SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0485520
Kind Code:
A
Abstract:
PURPOSE:To guide excellent light in and out on one main surface side of a glass substrate without any damage due to an etchant by depositing a light- transmissive protection film on the nearly entire surface on the main surface side. CONSTITUTION:On one main surface side of the glass substrate 1 made of nonalkaki glass, the protection film 2 is formed of tin oxide, tantalum oxide, etc., to about 50 - 100Angstrom thickness so as to secure light transmissivity. On the other main surface side, a thin film transistor 3 is formed. The film 2 is never affected by the etchant such as an HI solution used for respective processes wherein 1st and 2nd semiconductor areas 3a and 3b, a gate insulating film 3c, and an electrode 4d are formed. This device can, therefore, be used suitably as the panel of an active matrix type liquid crystal display device which has many thin film transistors formed on the other main surface of a glass substrate 1.
More Like This:
| JP2000022159 | MANUFACTURING FOR SEMICONDUCTOR DEVICE |
| JP2001249351 | LIQUID CRYSTAL DISPLAY DEVICE |
| JP3605932 | Manufacturing method of MIM type nonlinear element |
Inventors:
TANAKA KIYONARI
YAMAGUCHI NORITOSHI
NITTA YOSHITERU
TOMITA KENJI
YAMAGUCHI NORITOSHI
NITTA YOSHITERU
TOMITA KENJI
Application Number:
JP20178290A
Publication Date:
March 18, 1992
Filing Date:
July 30, 1990
Export Citation:
Assignee:
KYOCERA CORP
International Classes:
G02F1/136; G02F1/1368; H01L21/306; H01L21/336; H01L27/12; H01L29/78; H01L29/786; (IPC1-7): G02F1/136; H01L21/306; H01L21/336; H01L27/12; H01L29/784
Next Patent: JPH0485521