Title:
THIN-FILM SEMICONDUCTOR ELEMENT AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH04302436
Kind Code:
A
Abstract:
PURPOSE: To reduce the manufacturing cost of the title element by a method wherein the resistance of a lower-part electrode can be made small and said lower-part electrode is formed by using a simple film-formation device and with good efficiency while the close contact property of the lower-part electrode with a substrate is ensured sufficiently.
CONSTITUTION: A lower-part electrode 12G formed on a substrate 11 is formed of a two-layer film by the following: a substratum film 12a composed of an electroless-plated film by a metal whose close contact property with the substrate 11 is good; and an upper-layer film 12b composed of an electroless-plated film by a low-resistance metal.
Inventors:
KAMATA HIDEKI
YUZAWA YAYOI
YUZAWA YAYOI
Application Number:
JP8899191A
Publication Date:
October 26, 1992
Filing Date:
March 29, 1991
Export Citation:
Assignee:
CASIO COMPUTER CO LTD
International Classes:
H01L21/288; C23C18/31; H01L21/336; H01L27/12; H01L29/78; H01L29/786; (IPC1-7): H01L21/288; H01L21/336; H01L27/12; H01L29/784