THIN-FILM SEMICONDUCTOR ELEMENT

Title:

THIN-FILM SEMICONDUCTOR ELEMENT

Document Type and Number:

Japanese Patent JPH08316486

Kind Code:

A

Abstract:

PURPOSE: To obtain a thin-film semiconductor element of a structure, wherein a drain current in an off-state of the element is reduced and at the same time, an even reduction in an off-state current is possible in case of a large quantity production of the element.

CONSTITUTION: Source and drain regions 2 and 3 of a thin-film transistor respectively have a laminated structure, wherein a doped amorphous semiconductor layer 2a consisting of a high-resistance a-Si film is formed in the side of the upper layer of the region 2 and a doped polycrystalline semiconductor layer 2b consisting of a low-resistance impurity-doped a-Si film is formed in the side of the lower layer of the region 2, and a laminated structure, wherein a doped amorphous semiconductor layer 3a consisting of a high-resistance a-Si film is formed in the side of the upper layer of the region 3 and a doped polycrystalline semiconductor layer 3b consisting of a low-resistance doped a-Si film is formed in the side of the lower layer of the region 3. The thickness of the layers 2a and 3a is formed in such a way as to become thicker than that of a channel of the transistor.

Inventors:

SANO KEIICHI
NODA TOMOYUKI
AYA YOICHIRO

Application Number:

JP11863595A

Publication Date:

November 29, 1996

Filing Date:

May 17, 1995

Export Citation:

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Assignee:

SANYO ELECTRIC CO

International Classes:

H01L21/336; H01L29/786; (IPC1-7): H01L29/786; H01L21/336

Attorney, Agent or Firm:

Contents Makoto (1 person outside)

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