To improve the power generation efficiency of a thin film Si-based solar cell having a-Si cells as the components by improving the power generation current by the light of short wavelength from the a-Si cells, and to minimize light degradation of the a-Si cells, thereby improving the retention.
In the thin film silicon-based solar cell including one or more pin junctions, the i-layer of a pin junction located at the most light incident side is composed of amorphous silicon, the p-layer has a refractive index Nd of 2.5 to 2.9 at a measurement wavelength of 1000 nm, and bright conductivity of 1×10-9 S/cm to 1×10-6 S/cm, and an interface layer in contact with both the p-layer and the i-layer has a two layer structure of an intrinsic amorphous silicon carbide layer and an intrinsic amorphous silicon layer in order from the light incident side.
| WO/2013/058051 | SOLAR BATTERY |
| JPS63177 | OPTOELECTRIC TRANSDUCER |
| JP2010009786 | DYE SENSITIZED SOLAR CELL, AND DYE SENSITIZED SOLAR CELL MODULE |
SASAKI TOSHIAKI
MATSUMOTO KEISUKE
MATSUDA TAKAHIRO
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