Title:
THIN-FILM SILICON DIODE AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH10163506
Kind Code:
A
Abstract:
To reduce the load capacitance of a signal line by reducing parasitic capacitance etc.
An Si film, e.g. polysilicon film 4 contacted onto an insulating layer 3 has a thin film diode, composed of two mutually adjacent and mutually opposite conductivity-type conductive regions 4a, 4b connected to wiring layers 7, 8, respectively. This SOI type thin-film diode has a very low parasitic capacitance and comparatively low junction capacitance due to which if it is used as a switching element, the signal line load capacitance of a semiconductor diode, e.g. diode ROM, PLA, shift register etc., is greatly reduced to develop a high-speed and low-power consumption semiconductor device.
Inventors:
TAKAHASHI HIROSHI
MURAMATSU SHIGETOSHI
MURAMATSU SHIGETOSHI
Application Number:
JP31964296A
Publication Date:
June 19, 1998
Filing Date:
November 29, 1996
Export Citation:
Assignee:
TEXAS INSTRUMENTS JAPAN
International Classes:
H01L21/82; H01L27/10; H01L29/861; H03K19/177; (IPC1-7): H01L29/861; H01L21/82; H01L27/10; H03K19/177
Attorney, Agent or Firm:
Takahisa Sato
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