Title:
THIN FILM TRANSISTOR ARRAY
Document Type and Number:
Japanese Patent JPH01186916
Kind Code:
A
Abstract:
PURPOSE:To repair a line defect due to short-circuit between a gate and source without disconnecting the wiring by fusing the connection part between scanning line and the gate electrode of an FET connected to this line by a current larger than the driving current of the TFT. CONSTITUTION:A gate electrode 3 is connected to a scanning line 1 through a connection part 100 which is partially narrowed so that it can be fused with a current larger than the driving current of the TFT. When a voltage to turn on the TFT is applied to the scanning line 1 and a signal line 2 is set to the earth potential, a relatively large current determined by resistances of respective lines and the resistance of a short-circuit part flows to fuse the connection part 100 if short-circuit between the gate and the source exists. If short-circuit between the gate and the drain exists, the TFT turning-on current flows to the connection part 100 to fuse the connection part 100 because the voltage applied to the scanning line 1 is applied to a drain electrode 5 through the short-circuit part 100. Thus, the line defect due to short-circuit between the gate and the source is repaired without disconnecting the wiring.
Inventors:
TAMURA TATSUHIKO
NAGATA SEIICHI
NAGATA SEIICHI
Application Number:
JP1116588A
Publication Date:
July 26, 1989
Filing Date:
January 21, 1988
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/82; G02F1/13; G02F1/136; G02F1/1368; H01L27/12; H01L29/78; H01L29/786; G02F1/1362; (IPC1-7): G02F1/133; H01L21/82; H01L27/12; H01L29/78
Attorney, Agent or Firm:
Toshio Nakao (1 outside)