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Title:
THIN FILM TRANSISTOR CIRCUIT BOARD AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2013110291
Kind Code:
A
Abstract:

To provide a circuit board which has: a thin film transistor with a thick gate insulating layer; and a thin film transistor with a thin gate insulating layer.

A gate insulating layer of a bottom gate thin film transistor and a gate insulator of a top gate thin film transistor are respectively provided on the top and the bottom of a polysilicon semiconductor layer. The thickness of the gate insulator of the top gate thin film transistor is different from the thickness of the gate insulating layer of the bottom gate thin film transistor.


Inventors:
WATAKABE SO
ISHIDA ARICHIKA
HIRAMATSU MASAHITO
MATSUURA YUKI
Application Number:
JP2011254812A
Publication Date:
June 06, 2013
Filing Date:
November 22, 2011
Export Citation:
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Assignee:
JAPAN DISPLAY CENTRAL CO LTD
International Classes:
H01L21/336; G02F1/1368; H01L21/8234; H01L27/08; H01L27/088; H01L29/786
Domestic Patent References:
JPH1154761A1999-02-26
JPS6480072A1989-03-24
JP2003152193A2003-05-23
JPH1010544A1998-01-16
JPH0823100A1996-01-23
JPH11212119A1999-08-06
JP2011119718A2011-06-16
JP2002033481A2002-01-31
JPH04133033A1992-05-07
Foreign References:
US20080116457A12008-05-22
Attorney, Agent or Firm:
Kurata Masatoshi
Takakura Shigeo
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Morisezo Iseki
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori



 
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