PURPOSE: To prevent breakdown by static electricity on the mounting of a TFT device by inserting a two terminal element, which can be manufactured at the same time as a TFT and has predetermined structure, between external extracting terminals for the thin-film transistor TFT.

CONSTITUTION: A TFT consists of a gate electrode 2, a gate insulating film 3, a semiconductor thin-film 4 and source-drain electrode 5, 6 formed onto a glass substrate 1, and a two terminal element is inserted between source and gate terminals 15, 12. The element is shaped onto an additional gate insulating film 13 deposited at the same time as the insulating film 3, an additional semiconductor thin-film 14 is formed at the same time as the thin-film 4 and first and second main electrodes 105, 106 at the same time as the electrodes 5, 6 and the thin-film 14 and the electrodes 105, 106 are short-circuited to the electrode 106 and the gate terminal 12. When static electricity is applied to the terminal 15, static electricity is shunted to the gate side through the source side of the TFT and the two terminal element, and voltage substantially drops. A distance between the first and second main electrodes for the two terminal element is made shorter than the channel length of the TFT in general.