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Title:
THIN FILM TRANSISTOR AND DISPLAY USING THE SAME
Document Type and Number:
Japanese Patent JP3512849
Kind Code:
B2
Abstract:

PURPOSE: To achieve a higher ON/OFF current ratio by restricting an optical leakage current Ioff to a sufficiently small value.
CONSTITUTION: In a thin film transistor 171, at least one interval among shortest intervals from an arbitrary intersection of a contour line of a gate electrode 131 and a contour line of a drain electrode 141 to an intersection of the contour line of the gate electrode 131 and a contour line of a source electrode 151 is greater than a shortest interval of an overlapped portion with the drain electrode 141 among the contour lines of the gate electrode 131 and an verlapped portion with the source electrode 151 among the same.


Inventors:
Miura, Yasunori
Shibusawa, Makoto
Sugawara, Atsushi
Seiki, Masahiro
Application Number:
JP8181594A
Publication Date:
March 31, 2004
Filing Date:
April 20, 1994
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
G02F1/136; G02F1/1368; H01L21/336; H01L21/77; H01L21/84; H01L27/12; H01L29/417; H01L29/423; H01L29/78; H01L29/786; (IPC1-7): H01L29/786; G02F1/1368
Attorney, Agent or Firm:
鈴江 武彦



 
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