Title:
THIN FILM TRANSISTOR AND FABRICATION THEREOF
Document Type and Number:
Japanese Patent JP3130661
Kind Code:
B2
Abstract:
PURPOSE: To deposit an SiO2 film suitable for deposition of a gate oxide film having uniform thickness and quality by depositing the SiO2 film under a specific filming temperature through plasma CVD employing TEOS + O2 + He gas while generating plasma by means of rod electrodes.
CONSTITUTION: Large area sample substrates 2 are mounted in a silicon chamber 1 into which O2 gas, TEOS gas, and He gas are then introduced through gas introduction ports 3, 4, 5. Filming temperature in the silicon chamber 1 is controlled in the range of 450-600°C by means of a heater 7 disposed on the outside of the silicon chamber 1. Voltage is then applied between a pair of rod electrodes 8, 8' interposed between the silicon chamber 1 and the heater 7 to generate oxygen plasma thus depositing an SiO2 film having uniform quality and thickness. The SiO2 film thus deposited is employed in the deposition of a gate oxide film excellent in step coverage having low interface state density and high withstand voltage.
Inventors:
Michio Arai
Application Number:
JP19975092A
Publication Date:
January 31, 2001
Filing Date:
July 27, 1992
Export Citation:
Assignee:
TDK Co., Ltd.
International Classes:
H01L21/316; H01L21/336; H01L29/78; H01L29/786; (IPC1-7): H01L29/786; H01L21/316; H01L21/336
Attorney, Agent or Firm:
Akira Yamatani (1 person outside)