THIN FILM TRANSISTOR FERROELECTRIC RANDOM ACCESS MEMORY AND ITS MANUFACTURE

Title:

THIN FILM TRANSISTOR FERROELECTRIC RANDOM ACCESS MEMORY AND ITS MANUFACTURE

Document Type and Number:

Japanese Patent JPH10209388

Kind Code:

A

Abstract:

To provide a highly integrated FRAM in a simple structure.

A plurality of TFTs are arranged on the upper part of a ferroelectric capacitor which is provided with respectively and integrally formed lower electrode 1 and a ferroelectric layer 2 and a plurality of upper electrodes 3. The plurality of TFTs are provided respectively corresponding to the upper electrodes 3. Insulator layers 4a are further provided on the upper electrodes 3 so as to leave windows for bringing the TFTs into contact with the upper electrodes 3 to form the TFTs on the insulator layers 4a and exposed upper electrodes 3. Besides, ground pads are formed between the plurality of upper electrodes 3 on the ferroelectric layer 2 to discharge the charge generated by the pyroelectric effect on the surface of the ferroelectric layer. In such a constitution, it is recommended that the lower and upper electrodes 1, 3 are formed of ceramics especially RuOx.

Inventors:

RYU INKEI
TEI ICHISHO

Application Number:

JP35157797A

Publication Date:

August 07, 1998

Filing Date:

December 19, 1997

Export Citation:

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Assignee:

SAMSUNG ELECTRONIC

International Classes:

H01L21/8247; H01L21/8242; H01L21/8246; H01L27/10; H01L27/105; H01L27/108; H01L29/786; H01L29/788; H01L29/792; (IPC1-7): H01L27/10; H01L27/108; H01L21/8242; H01L21/8247; H01L29/788; H01L29/792; H01L29/786

Attorney, Agent or Firm:

Yukio Ono (1 person outside)

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