THIN FILM TRANSISTOR AND ITS MANUFACTURE

Title:

THIN FILM TRANSISTOR AND ITS MANUFACTURE

Document Type and Number:

Japanese Patent JPH05152573

Kind Code:

A

Abstract:

PURPOSE: To let a large amount of current flow by making a gate wiring body of an aluminum or aluminum alloy, and making an interlayer insulating film between the gate wiring body and a semiconductor layer of a high melting point metallic oxide.

CONSTITUTION: Aluminum 32 is grown on a transparent substrate 31, and successively metal 33, by which an oxide becomes dense when an anode is oxidated; and the oxide being large in electric permeability can be gotten. And they are placed on the aluminum film 32. Next, the metal 33 becomes an metallic oxide film 35 by performing anode oxidation, and dense insulating film can be gotten. Hereby, the channel conductance when having turning on a film transistor can be made large, and a large amount of current can be made to flow.

Inventors:

ITOIDA SATOSHI
KUDO YASUKI
MORIMOTO MITSUTAKA
HAMANO KUNIYUKI

Application Number:

JP34025491A

Publication Date:

June 18, 1993

Filing Date:

November 29, 1991

Export Citation:

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Assignee:

NEC CORP

International Classes:

G02F1/136; G02F1/1368; H01L21/3205; H01L21/336; H01L21/768; H01L23/52; H01L27/12; H01L29/78; H01L29/786; (IPC1-7): G02F1/136; H01L21/3205; H01L21/90; H01L27/12; H01L29/784

Domestic Patent References:

JPS62152173A	1987-07-07
JPS6435421A	1989-02-06

Attorney, Agent or Firm:

Seiichi Kuwai

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