Title:
薄膜トランジスタの製造方法
Document Type and Number:
Japanese Patent JP5139368
Kind Code:
B2
Abstract:
A method for making a thin film transistor, the method comprising the steps of: providing a growing substrate; applying a catalyst layer on the growing substrate; heating the growing substrate with the catalyst layer in a furnace with a protective gas therein, supplying a carbon source gas and a carrier gas at a ratio ranging from 100:1 to 100:10, and growing a carbon nanotube layer on the growing substrate; forming a source electrode, a drain electrode, and a gate electrode; and covering the carbon nanotube layer with an insulating layer, wherein the source electrode and the drain electrode are electrically connected to the single-walled carbon nanotube layer, the gate electrode is opposite to and electrically insulated from the single-walled carbon nanotube layer.
Inventors:
Ginger
Lee Gunkei
Han Moriyoshi
Lee Gunkei
Han Moriyoshi
Application Number:
JP2009117603A
Publication Date:
February 06, 2013
Filing Date:
May 14, 2009
Export Citation:
Assignee:
Tsinghwa University
HON HAI PRECISION INDUSTRY CO.,LTD.
HON HAI PRECISION INDUSTRY CO.,LTD.
International Classes:
H01L29/786; H01L21/205; H01L21/28; H01L21/336; H01L29/06; H01L29/417; H01L29/423; H01L29/49; H01L51/05; H01L51/30
Domestic Patent References:
| JP2007165473A | ||||
| JP2004067413A |
Foreign References:
| WO2007126412A1 |
Attorney, Agent or Firm:
Yasuhiko Murayama
Masatake Shiga
Takashi Watanabe
Shinya Mitsuhiro
Masatake Shiga
Takashi Watanabe
Shinya Mitsuhiro