THIN-FILM TRANSISTOR SUBSTRATE, AND DISPLAY DEVICE

Japanese Patent JP2009105424

A

To provide a thin-film transistor substrate which has a structure in which an aluminum alloy film forming a source, drain wirings is directly connected to a transparent electrode, and both the source, drain wirings and a gate wiring have good characteristics, and can be manufactured in a remarkably simplified process, and to provide a display device equipped with the thin-film transistor substrate.

As shown in Fig. 2, the thin-film transistor substrate has a gate wiring, and the source wiring and the drain wiring that are arranged orthogonal to the gate wiring. The composition of a single-layer aluminum alloy film for composing the gate wiring 26 is identical to that of the single-layer aluminum alloy layer for composing the source wiring and drain wiring 28 and 29. The display device having the thin-film transistor substrate is obtained.

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GOTO YASUSHI
KUGIMIYA TOSHIHIRO
FUKU KATSUFUMI

JP2008317315A

May 14, 2009

December 12, 2008

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KOBE STEEL LTD

H01L29/786; G02F1/1368; G09F9/30; H01L21/28; H01L21/3205; H01L21/768; H01L23/52; H01L29/417; H01L29/423; H01L29/49

JP2004214606A	2004-07-29
JPH06235933A	1994-08-23
JP2002314088A	2002-10-25
JPH08306693A	1996-11-22
JPH0745555A	1995-02-14

Kyuichi Ueki
Tadashi Sugakawa
Osamu Futakuchi
Hiroaki Ito
Hisahiko Ueki

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