Title:
THIN FILM TRANSISTOR
Document Type and Number:
Japanese Patent JP2016197734
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device that has a low off-state current, and preferably has a high on-state current and high mobility, the method being performed in simplified processes.SOLUTION: In manufacturing a channel-etch type thin film transistor, at least a semiconductor layer is formed on a gate insulation layer; a conductive film is formed on the semiconductor layer; an etching mask is formed on the conductive film; a substrate is carried into a reaction chamber; the conductive film is processed to form a source electrode and a drain electrode layer; a semiconductor etching gas is introduced in the reaction chamber; etching is performed by using the semiconductor etching gas in the reaction chamber; the substrate is carried out from the reaction chamber; and subsequently the etching mask is removed. That is, processes from processing of the conductive film to the etching that is performed by using the semiconductor etching gas are continuously performed in the same chamber and the etching performed by using the semiconductor etching gas is performed before removing the etching mask.SELECTED DRAWING: Figure 1
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Inventors:
SASAGAWA SHINYA
FUJIKI HIROSHI
FUJIKI HIROSHI
Application Number:
JP2016126258A
Publication Date:
November 24, 2016
Filing Date:
June 27, 2016
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L21/336; G02F1/1368; H01L21/3065; H01L29/786
Domestic Patent References:
| JP2009111365A | 2009-05-21 | |||
| JP2010186993A | 2010-08-26 | |||
| JP2009111365A | 2009-05-21 | |||
| JP2010186993A | 2010-08-26 | |||
| JP2009135482A | 2009-06-18 | |||
| JP2009111364A | 2009-05-21 | |||
| JP2009135482A | 2009-06-18 | |||
| JP2009111364A | 2009-05-21 | |||
| JP2009111365A | 2009-05-21 | |||
| JP2010186993A | 2010-08-26 |