Title:
THIN-FILM TRANSISTOR
Document Type and Number:
Japanese Patent JPH04315475
Kind Code:
A
Abstract:
PURPOSE: To contrive to reduce a contact resistance by increasing the contact area of a source-drain electrode without enlarging the planar shape of a transistor.
CONSTITUTION: When a silicon oxide film 3 being trapezoidal in cross section is formed in the lower part of a gate electrode 2 and then a silicon nitride film(gate insulating film) 4, high-resistance amorphous silicon film 5 and low- resistance amorphous silicon film 6 are formed on the silicon oxide film, the amorphous silicon film 6 being the contact part of the source-drain electrode 7 is formed in an inclined part.
Inventors:
HARA YUJI
Application Number:
JP10893591A
Publication Date:
November 06, 1992
Filing Date:
April 12, 1991
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L29/78; H01L29/786; (IPC1-7): H01L29/784
Attorney, Agent or Firm:
Yusuke Omi