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Title:
THIN FILM TRANSISTOR
Document Type and Number:
Japanese Patent JPS62165368
Kind Code:
A
Abstract:

PURPOSE: To facilitate uniform display and avoid variation of the characteristics between individual display devices by a method wherein a drain electrode is formed into a stripe shape pattern which crosses a part of the central portion of the overlapping part of a gate electrode and a semiconductor thin film and a source electrode is so formed as not to be contacted with the drain electrode and to overlap a part of the gate electrode.

CONSTITUTION: A semiconductor film 4 is formed above a part of a gate electrode 2 where a thin film transistor is to be formed with a gate insulating film between and a drain electrode 6 and a source electrode 5 are formed on a part of the semiconductor film 4. The drain electrode 6 is formed into a stripe and laminated so as to cross a part of the central portion of the overlapping part of the gate electrode 2 and the semiconductor film 4. The overlapping part of the gate electrode 2 and the drain electrode 6 is shown by a shaded part and the source electrode 5 is formed on the gate electrode 2 so as not to touch the shaded part. As the drain electrode 6 is formed into a stripe on the overlapping part of the gate electrode 2 and the semiconductor film 4, the area of the overlapping part is determined by Wg (width of the gate electrode) × Wd (width of the drain electrode) and does not fluctuate. Therefore Cgd becomes constant.


Inventors:
HAMADA HIROSHI
NAKAZAWA KIYOSHI
TAKATO YUTAKA
Application Number:
JP773886A
Publication Date:
July 21, 1987
Filing Date:
January 16, 1986
Export Citation:
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Assignee:
SHARP KK
International Classes:
H01L27/12; G02F1/136; G02F1/1368; H01L29/78; H01L29/786; (IPC1-7): G02F1/133; G09F9/35; H01L27/12; H01L29/78
Domestic Patent References:
JPS6295865A1987-05-02
Attorney, Agent or Firm:
Aoyama



 
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