Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
THIN FILM TYPE PHOTOELECTRIC CONVERSION ELEMENT
Document Type and Number:
Japanese Patent JPS57166083
Kind Code:
A
Abstract:
PURPOSE:To improve the photoenergy absorption by a method wherein, when the transparent conductive film, the photoelectric conversion layer and the metallic electrode film are laminated on the photoconductive substrate in this order, the surface of said substrate is made rugged taking sufficient space coming into contact with the transparent conductive film. CONSTITUTION:The surface of the photoconductive substrate 1 comprising the soda glass, the quartz glass and the like is made rugged by means of sand blasting, grinding by sand paper or the chemical or ion beam etching. Next said rugged surface is coated with the transparent conductive film 3 such as In2O3, SnO2 and the like by means of the spattering and the like and the CdS film 4, the GdTe film 5 and the Te film 6 as the photoelectric conversion layer are laminated on said film 3 to form the element. Then the Au electrode 7 is mounted on said film 6 making the light enter into the back side of said substrate 1. Through these procedures, the sensitivity of the photoelectric conversion element may be improved.

Inventors:
SAKURAI KOUICHI
ISHIWATARI TATSUMI
MORI KOUJI
Application Number:
JP5124081A
Publication Date:
October 13, 1982
Filing Date:
April 07, 1981
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
RICOH KK
International Classes:
H01L31/04; H01L31/0392; H01L31/072; H01L31/073; (IPC1-7): H01L31/08
Domestic Patent References:
JP55152071B



 
Previous Patent: JPS57166082

Next Patent: SEMICONDUCTOR RESISTOR SENSING LIGHT