PURPOSE: To provide high saturated magnetization or 13kg or more and high frequency permeability of 1MHz or more by forming a thin magnetic film of specific amounts of V, Mo, Cu, Ag, Si, Ge, B, etc., and the balance of Fe by atomic%, and setting the size of crystal grains to a specific range.
CONSTITUTION: A thin magnetic film which contains by atomic% 1-5% of at least one type of V, Nb, Ta, Cr, Mo and W, 0.1-3% of at least one type of Cu, Ag and Bi, 8-18% of at least one type of Si, Ge, 3-10% of B, and substantially the balance of Fe, and has 20-500 of the size of crystal grains is provided. A desired alloy is manufactured by a vacuum high frequency melting method, formed in a predetermined shape, applied to a packing plate to form a target 3, and a thin film is manufactured by an ion beam sputtering device. A substrate 1 is made of glass, the substrate is heated to 500°C. A main gun 2 is of an ion gun for sputtering the target 3, and a sub gun 4 is of a gun for radiating argon ions to the film at the time of formation of the film. Thus, the crystal grains of the film is miniaturized.
HASHIMOTO SUSUMU
NAKAMURA SHIHO
