Title:
THIN SIC FILM
Document Type and Number:
Japanese Patent JPS6311663
Kind Code:
A
Abstract:
PURPOSE: To form a thin SiC film having superior strength, corrosion, wear and radiation resistances as well as high heat conductivity and electric insulation by using SiC mixed with BeO.
CONSTITUTION: SiC powder is mixed with BeO powder as a sintering aid and hot pressed at 2,100°C under 300kg.f/cm2 pressure for 1hr. The hot pressed SiC is formed into a plate of 100×5t and brazed to a copper plate of 120×4t with silver solder to produce a target for sputtering. The target is placed in a high frequency magnetron sputtering device and sputtered with 200W power under 1×10-2Torr pressure of gaseous Ar for 15W60sec to form a thin film on a substrate heated to ≥500°C.
Inventors:
MIURA YUJI
BABA NOBORU
BABA NOBORU
Application Number:
JP15166486A
Publication Date:
January 19, 1988
Filing Date:
June 30, 1986
Export Citation:
Assignee:
HITACHI LTD
International Classes:
C04B35/565; C23C14/06; C23C14/34; (IPC1-7): C04B35/56; C23C14/06; C23C14/34
Attorney, Agent or Firm:
Katsuo Ogawa
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