PURPOSE: To perform wiring without forming a parasitic transistor by flatly filling an inverted triangle space between a saw-tooth projection and a projection with an electrically inactive material.
CONSTITUTION: A ridge-line channel 2 is provided at the ridge line of the tip part of the projection on a saw tooth having the triangle cross section. Of the space part of the saw-tooth space, a part on the side of a substrate from the channel 2 is filled with an inactive embedding layer 1. Then, a structure, wherein a wiring 6 is arranged on the embedding layer 1, is provided. Thus, a thin-wire channel element wherein a parasitic element is not formed can be obtained. The generation of the parasitic element which is formed in the side wall of the projection can be prevented by the deposition of the inactive material at the side wall part of the projection of the substrate and the forming method of the embedding layer 1 by etch back.
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YASUI JURO
ODANAKA SHINJI
HASHIMOTO SHIN
INOUE KAORU
TERUI YASUAKI
