Title:
ETCHING DAMAGE PREVENTING METHOD
Document Type and Number:
Japanese Patent JP3217844
Kind Code:
B2
Abstract:
PURPOSE: To prevent an etched surface from being affected by ion or plasma emission which is leaked out from a plasma chamber by isolating a substrate from the plasma chamber so that the etched surface of the substrate is not exposed to the plasma chamber except when ions are applied thereto.
CONSTITUTION: An etched surface 17 is arranged to be at a right angle to an extraction electrode 4 and at the same time a chlorine gas which makes etchant is supplied thereto within argon plasma at the time of supplying the etchant. Chlorine is exhausted outside a system by an exhaust device 11 at the time of purging the etchant. A substrate 16 is arranged so that the etched surface 17 is brought into being at a right angle to the extraction electrode 4 throughout the time of supplying the etchant and purging the etchant by function of a direction change over switch. Therefore, the etched surface 17 is not exposed to the plasma chamber 3. Then, the direction change over switch is controlled by a control section to be able to change the arrangement of the substrate 16 so that the etched surface 17 faces against the extraction electrode 4.
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Inventors:
Katsunobu Aoyagi
Ichiro Nakamoto
Kenji Gamo
Ichiro Nakamoto
Kenji Gamo
Application Number:
JP7125592A
Publication Date:
October 15, 2001
Filing Date:
March 27, 1992
Export Citation:
Assignee:
RIKEN
Ishikawajima Harima Heavy Industries Co., Ltd.
Ishikawajima Harima Heavy Industries Co., Ltd.
International Classes:
C23F4/00; H01L21/302; H01L21/3065; (IPC1-7): H01L21/3065; C23F4/00
Domestic Patent References:
| JP3133128A | ||||
| JP6142135A |
Attorney, Agent or Firm:
Nobuo Kinutani (1 outside)