THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME

Title:

THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME

Document Type and Number:

Japanese Patent JP2018182319

Kind Code:

A

Abstract:

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device in which an integration degree is more improved.SOLUTION: A three-dimensional semiconductor memory device and a manufacturing method are provided. The three-dimensional semiconductor memory device includes: a substrate having a peripheral circuit region and a cell allay region; an electrode structure having a plural number of electrodes vertically laminated on the substrate of the cell allay region; a peripheral side logic circuit provided onto the substrate of the peripheral side circuit region and having a first impure material region having a first impure material doped in the substrate; a peripheral side contact plug connected to the first impure material region; and a second impure material region interposed between the first impure material region and the peripheral side contact plug and having a second impure material doped in the first impure material region.SELECTED DRAWING: Figure 2J

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Inventors:

LEE TAE-HEE
LEE JUYEON
HWANG JEEHOON

Application Number:

JP2018074159A

Publication Date:

November 15, 2018

Filing Date:

April 06, 2018

Export Citation:

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Assignee:

SAMSUNG ELECTRONICS CO LTD

International Classes:

H01L27/11556; H01L21/336; H01L21/8239; H01L27/105; H01L27/11526; H01L27/11573; H01L27/11582; H01L29/788; H01L29/792; H01L45/00; H01L49/00

Domestic Patent References:

JP2012134460A	2012-07-12
JP2013102022A	2013-05-23
JP2000340743A	2000-12-08
JPH08130309A	1996-05-21
JP2015050462A	2015-03-16
JP2018049968A	2018-03-29
JP2005302914A	2005-10-27

Foreign References:

US20170104068A1	2017-04-13
US20160133630A1	2016-05-12
WO2008102438A1	2008-08-28
US20120061744A1	2012-03-15
US20150318293A1	2015-11-05
KR20150055189A	2015-05-21

Attorney, Agent or Firm:

Tadashige Ito
Tadahiko Ito
Shinsuke Onuki

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