Title:
THREE PHASE CRYSTAL GROWN METHOD
Document Type and Number:
Japanese Patent JPS5291374
Kind Code:
A
Abstract:
PURPOSE:To obtain semiconductor elements with superior electrical performance, by making accurate for the positioning of crystal grown portion and the control of the size of crystal rod, thru the growning of three phase crystal with the radiation of laser light beam to the desired part, after coating the metallic film on the major surface of the semiconductor base.
More Like This:
| JP4836377 | Growth of bulk single crystal of aluminum nitride from melt |
| WO/1992/002109 | CORELESS REFRACTORY FIBRES |
| JP2002255699 | ANNULAR CRYSTAL AND MANUFACTURING METHOD THEREOF |
Inventors:
NISHIOKA SUNAO
Application Number:
JP778076A
Publication Date:
August 01, 1977
Filing Date:
January 27, 1976
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
C30B11/12; H01L21/20; H01L21/208; H01L21/263; (IPC1-7): B01J17/00; H01L21/20; H01L21/263