Title:
Ti-Nb系酸化物焼結体スパッタリングターゲット、Ti-Nb系酸化物薄膜及び同薄膜の製造方法
Document Type and Number:
Japanese Patent JP5349583
Kind Code:
B2
Abstract:
Provided is a sputtering target of sintered Ti-Nb based oxide, wherein the sputtering target consists of titanium (Ti), niobium (Nb), and remainder being oxygen and unavoidable impurities, and the atomic ratio of Ti and Nb is 0.39 ¦ (Nb/(Ti + Nb)) ¦ 0.79. The sputtering target of sintered Ti-Nb based oxide has a high refractive index and a low extinction coefficient. Also provided is a thin film of Ti-Nb based oxide obtained by using the foregoing target, which enables high-rate deposition. The thin films has superior transmittance, is subject to minimal reduction and variation of reflectivity, and is useful as an interference film or a protective film of an optical information recording medium, or as a part of a constituent layer of an optical recording medium. The thin film can also be applied to a glass substrate; that is, it can be used as a heat reflecting film, an antireflection films or an interference filter,
Inventors:
Hideo Takami
Masataka Yahagi
Masataka Yahagi
Application Number:
JP2011506136A
Publication Date:
November 20, 2013
Filing Date:
March 26, 2010
Export Citation:
Assignee:
jx Nippon Mining & Metals Co., Ltd.
International Classes:
C23C14/34; C04B35/00; C04B35/46; C23C14/08; G11B7/24; G11B7/24062; G11B7/254; G11B7/257; G11B7/2578; G11B7/26
Domestic Patent References:
| JP2005256087A | 2005-09-22 | |||
| JP2006045666A | 2006-02-16 | |||
| JP2006193804A | 2006-07-27 | |||
| JP2001032064A | 2001-02-06 | |||
| JPH07233469A | 1995-09-05 |
Foreign References:
| WO2007119439A1 | 2007-10-25 |
Attorney, Agent or Firm:
Isamu Ogoshi