Title:
MOS TRANSISTOR WITH OVERCURRENT PROTECTING FUNCTION
Document Type and Number:
Japanese Patent JP3158701
Kind Code:
B2
Abstract:
PURPOSE: To provide a MOS transistor TR containing an overcurrent protecting function which eliminates the effect of the overcurrent protecting function to quickly start the load in a load start state and also can protect the overcurrent in a load steady state.
CONSTITUTION: When the voltage is applied to the other end of an input resistance 105, the 1st and 2nd MOS TR 101 and 103 conduct and the load 111 is started to supply a large current (flush current). When a large current flows to the TR 101, a large current also flows to the TR 103 in proportion to the TR101. Thus a protection means 107 is actuated. However, a capacitor 109 having no stored charge is apparently short-circuited and the voltage is never dropped by the resistance 105. As a result, both TR 101 and 103 are not turned off despite the actuation of the means 107.
Inventors:
Craison Tronnam Chai
Application Number:
JP23433892A
Publication Date:
April 23, 2001
Filing Date:
September 02, 1992
Export Citation:
Assignee:
Nissan Motor Co., Ltd
International Classes:
H03K17/08; G01R19/00; H03K17/12; H03K17/687; (IPC1-7): H03K17/08; G01R19/00; H03K17/687
Domestic Patent References:
| JP2226808A | ||||
| JP4167813A | ||||
| JP4117125A | ||||
| JP5327442A | ||||
| JP5259853A | ||||
| JP4106769U |
Previous Patent: ＬＥＤ調光装置、回路及び調光システム
Next Patent: IRIS CONTROL METHOD AND ELECTRONIC IRIS CONTROL CIRCUIT FOR VIDEO CAMERA
Next Patent: IRIS CONTROL METHOD AND ELECTRONIC IRIS CONTROL CIRCUIT FOR VIDEO CAMERA