Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0730103
Kind Code:
A
Abstract:
PURPOSE: To provide a manufacturing method for a semiconductor device which relaxes stress generating on the periphery of side wall edges and in the periphery of field oxide film edges and suppresses the generation of joint leaks when a side wall is formed on the sides of a gate electrode.
CONSTITUTION: After a gate electrode 4 is formed by way of a gate oxide film 3 on a semiconductor substrate 1, a silicon oxide film 7 is deposited over the entire surface. Then, the silicon oxide film is subjected to etchback to form a side wall 8 within a range in which the shaving depth of the semiconductor substrate 1 is under 200.
Inventors:
MATSUKAWA NAOKI
MIZUNO MAKOTO
SHIMAZU KATSUHIRO
MIZUNO MAKOTO
SHIMAZU KATSUHIRO
Application Number:
JP16793193A
Publication Date:
January 31, 1995
Filing Date:
July 07, 1993
Export Citation:
Assignee:
KAWASAKI STEEL CO
International Classes:
H01L29/78; H01L21/336; (IPC1-7): H01L29/78; H01L21/336
Attorney, Agent or Firm:
Tetsuya Mori (2 others)
Next Patent: ルテニウム―ホスフィン錯体