Title:
PHOTORESIST
Document Type and Number:
Japanese Patent JPS606942
Kind Code:
A
Abstract:
PURPOSE: To form a photoresist subjectable to high-speed reactive ion etching and yet ensuring a function as a blocking agent by incorporating a polar material in a photosensitive resin base.
CONSTITUTION: A photoresist is obtained by mixing (A) 99.9wt% photosensitive resin base, such as a compsn. consisting of cyclic polyisoprene or cyclic polybutadiene and a photosensitive compd. in the case of a negative type, and a compsn. consisting of a novolak resin and a photosensitive compd. in the case of a positive type, and (B) 0.1W90wt% fine magnetic particles, such as fine acicular magnetic particles of γ-Fe2O3 or Cr2O3 or the like.
Inventors:
FURUGUCHI SHIGEO
Application Number:
JP11375383A
Publication Date:
January 14, 1985
Filing Date:
June 24, 1983
Export Citation:
Assignee:
TOSHIBA KK
International Classes:
G03C1/00; G03F7/004; G03F7/038; H01L21/027; (IPC1-7): G03C1/71; G03C1/00; G03F7/00; H01L21/30
Attorney, Agent or Firm:
Takehiko Suzue