Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH0794721
Kind Code:
A
Abstract:
PURPOSE: To form an opening to put the channel region of a MOS transistor of SOI structure in contact with a substrate body in self-alignment manner with a gate electrode.
CONSTITUTION: Oxygen 33 is implanted into a Si substrate 11 using a polycrystalline Si film 22, a gate electrode, as a mask, and a buried SiO2 layer 35 is thereby formed. Arsenic 36 is implanted into the Si substrate 11 using the polycrystalline Si film 22 as a mask, and a source and a drain 23 are thereby formed.
Inventors:
IWASA SHOICHI
Application Number:
JP26176493A
Publication Date:
April 07, 1995
Filing Date:
September 24, 1993
Export Citation:
Assignee:
NIPPON STEEL CORP
International Classes:
H01L29/78; H01L21/336; H01L29/786; (IPC1-7): H01L29/78
Attorney, Agent or Firm:
Kokubun Takaetsu